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| NTE6400 & NTE6400A Unijunction Transistor Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable "N" type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conventional silicon or germanium transistors. These devices are intended for applications where circuit economy is of primary importance. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) RMS Power Dissipation, PD Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/C RMS Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak Emitter Current (TJ = +150C), IE(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Emitter Reverse Voltage (TJ = +150C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Interbase Voltage, VBB NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Operating Temperature Range, Topr Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +140C Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16C/mW Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Intrinsic Standoff Ratio NTE6400 NTE6400A Interbase Resistance Modulated Interbase Current Emitter Reverse Current NTE6400 NTE6400A Peak Point Emitter Current Valley Point Current Base-One Peak Pulse Voltage Symbol Test Conditions VBB = 10V, Note 1 Min 0.4 54 4 6.8 - - - 8 3 Typ - - - - - - - - - Max 0.80 0.67 12 30 12 1 25 - - A mA V k mA A Unit RBBO IB2(MOD) IEO VBB = 3V, IE = 0, Note 1 VBB = 10V, IE = 50mA VB2E = 30V, IB1 = 0 IP IV VOB1 VBB = 25V VBB = 20V, RB2 = 100 Note 1. The intristic standoff ratio, , is essentially constant with temperature and interbase voltage. It is defined by the following equation: VP = VBB + Where VP VBB Tj 200 Tj = Peak point emitter voltage = Interbase voltage = Junction Temperature (Degrees Kelvin) Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well-defined manner. The temperature coefficient at +25C is approximately 0.8%/C. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia .210 (5.33) Dia Max B2 B1 45 Emitter .031 (.793) |
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